型号:

NP36N055SLE-E1-AY

RoHS:无铅 / 符合
制造商:Renesas Electronics America描述:MOSFET N-CH 55V 36A TO-252
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
NP36N055SLE-E1-AY PDF
标准包装 2,500
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 55V
电流 - 连续漏极(Id) @ 25° C 36A
开态Rds(最大)@ Id, Vgs @ 25° C 13 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 250µA
闸电荷(Qg) @ Vgs 80nC @ 10V
输入电容 (Ciss) @ Vds 4400pF @ 25V
功率 - 最大 1.2W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 TO-252(MP-3ZK)
包装 带卷 (TR)
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